Location: GoldTech Components Co.,Ltd. » News » The two challenges impede the spread of GaN devices across the board is expected to fall avalanche-style prices


    Contact Us

    The two challenges impede the spread of GaN devices across the board is expected to fall avalanche-style prices

    Although the third generation of semiconductor GaN is well received, but to know that gallium nitride is an artificial material, the natural formation of gallium nitride conditions are extremely harsh. Based on the above mentioned advantages of gallium nitride, gallium nitride is becoming the preparation of broad-spectrum, high power, high efficiency, microelectronics, power electronics, optoelectronics and other key infrastructure materials, but the face of bulk applications, GaN still exist Many challenges.

     MACOM Wireless Product Center, senior director of Cheng Gang told reporters, GaN applications, the main obstacle is the high cost and low supply capacity, but this barrier is because the cost of silicon-based GaN technology and large-size chip technology to solve, which will accordingly To open some previously not involved in market applications.

     In fact, the high cost of GaN applications is difficult to large-scale roll out one of the reasons, while the larger size of the chip can reduce costs. In the GaN product development, more and more manufacturers to look at the larger size of the GaN chip preparation, so you can quickly reduce costs.

    "The current mainstream GaN wafer size is 4 inches."

    Qorvo Huang Jing, senior account manager, told reporters that all manufacturers are now trying to import larger size wafers to reduce costs. Such as Qorvo will soon put into production 6-inch GaN production line. As the large-size GaN wafer production line technology threshold is extremely high, the future GaN wafer size change depends on the various manufacturers for large-size GaN production line technical mastery and the whole industry chain for the demand for GaN.

    Cheng Gang believes that the current mainstream trend of GaN technology is to 6-inch wafer transfer, MACOM has begun to prepare to 8-inch process migration. Because MACOM uses the silicon substrate and the mainstream digital CMOS chip substrate is no essential difference, benefit from the maturity of the silicon process, to 8 inches of the transfer process is very smooth. Once the same 8-inch substrate as the existing LDMOS is achieved, the number of single-chip output chips will be four times that of the LDMOS, corresponding to a significant reduction in GaN device cost, since MACOM's GaN device power density is four times that of LDMOS, The next few years will see GaN device prices avalanche-style decline.
    Gallium nitride is becoming the preparation of broad-spectrum, high power, high efficiency, microelectronics, power electronics, optoelectronics and other key infrastructure materials, but the face of bulk applications, GaN still exist Many challenges.
    Propose changes
    Google Translator (Enterprise Edition): Translator Toolkit Website Translator Global Business Insight

    About Google Translate Community Mobile Google About Us Privacy and Terms of Use Help Send feedback

    "The GaN wafer 8-size process is expected to be in volume production by 2017-2020, which will significantly reduce the cost of GaN devices by at least 30%." For the cost reductions, Fujitsu Electronic Components (Shanghai) Co., Ltd. Sun Bin, deputy product manager, said the case.

    In addition to making the wafers larger, making gallium nitride wafers thinner makes them directly part of the gallium nitride device (or die), producing "substrate-less gallium nitride wafers" is also a low-cost Application of research and development direction. Gallium nitride chip thickness is usually 0.1 mm, the current sapphire substrate to do out of the gallium nitride chip is usually 0.4 mm in thickness, in the course of the necessary "thin" after the package used.

    "The high power density characteristics of GaN devices require a good heat dissipation, so the GaN wafers are usually thinned to 0.05-0.1 mm, which also leads to chip welding and assembly difficulties." Cheng Gang told reporters, silicon-based The GaN process has a natural advantage from the proven traditional silicon process, which enables the wafer to be thinner for better thermal conductivity, while the die bonding and assembly are easier to integrate with conventional processes to accommodate a variety of ceramic and plastic packages.

    At the same time in the IC packaging and testing, Texas Instruments Asia Pacific analog products, automotive solutions business development director Wu Weiqiang told reporters, traditionally, GaN devices are packaged as discrete devices, driven by a separate driver, this is because the GaN devices and drivers based on Different processing techniques, and may come from different vendors, each package will have the introduction of parasitic inductance wire and lead. The TI introduced LMG3410 new device is used in 8mmx8mm square flat leadless (QFN) package. In order to create a broad market for GaN development space, TI is committed to helping customers simplify the use of GaN devices, and optimize its performance, by the GaN FET and high-performance drive package together in a module to achieve amazing performance. Compared to a discrete GaN solution, the QFN package reduces power loss, component voltage stress, and electromagnetic interference (EMI).

    However, it should be noted that, in addition to the cost and supply capacity challenges, GaN in the high-temperature growth and device manufacturing also has a certain degree of obstacles. In the high-temperature growth of GaN materials, GaN heteroepitaxial (using sapphire and SiC as the substrate) technology to grow the GaN single crystal, it can not solve the problem of high heteroepitaxial defect density itself. Cheng Gang told reporters that the defect can be completely GaN substrate to solve, but its productivity and economy may be more difficult to solve the problem. MACOM uses a mature silicon substrate process to replace sapphire and SiC substrate, while ensuring a considerable RF performance, to solve the problem of productivity and economy, the application of GaN into the utility into a great advance.

    In the GaN device manufacturing, because GaN is a wide bandgap semiconductor, the polarity is too large, it is difficult to obtain better metal-semiconductor ohmic contact through high doping, which is a difficult problem in GaN device manufacturing. Cheng Gang said that the current access to good ohmic contact is indeed the focus of attention in the industry, there are several areas of research has achieved positive results, such as the use of HEMT doped region for advanced HEMT design, and low temperature ohms Contact to improve the contact surface morphology. MACOM will consider these processes in subsequent new product evolution, but in fact the process of RF GaN chip is sufficient to meet the current commercial market technical requirements.

    From the high-frequency high-power devices began to spread to the formation of 5G deployment of industrial support

    Overall, driven by market-driven technology and progress, GaN's momentum will be very rapid, so that the view that, GaN materials will gradually become silicon-based MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and LDMOS Diffusion metal oxide semiconductor) process alternatives. With the gradual opening of the GaN market applications, GaN is expected with silicon carbide, gallium arsenide and other transistor devices launched in different orders of magnitude of market applications.

    Cheng Gang told reporters, as the frequency increases, silicon-based LDMOS very difficult to produce the necessary power, bandwidth and efficiency. GaN material will replace LDMOS in the frequency band above 2.5-2.7 GHz, and will play a role in the lower frequency band. If the price of GaN is close to LDMOS, GaAs will play a role in low-frequency, low-power RF applications at higher frequencies until the ripening price of GaN products is sufficient to compete with GaAs. MACOM believes silicon-based GaN technology should be the fastest to deliver high-volume commercial GaN-based RF performance and will gradually replace GaAs and LDMOS.

    Wu Weiqiang said that the power switch has been made of silicon MOSFET, but now is being replaced by GaN-FET. This is because the GaN-based switching power transistors enable new power applications, with higher performance and lower losses when operating at higher voltages than previously used silicon (Si) transistors.

    In the past few years, Si switch performance has been greatly improved, but in the same size and high pressure, GaN provides a major improvement is unlikely to be achieved Si. Currently, Si-MOSFETs have a significant cost advantage for GaN, but this cost difference will shrink over time, so GaN may replace silicon-based MOSFETs as design problems are gradually resolved.

    In fact, the physical properties of a semiconductor material determine the final performance of the end device. Over the past three decades, silicon has dominated power applications. Wu Weiqiang told reporters, with the performance of silicon close to the theoretical limit, the performance improvement has become very limited. As emerging semiconductor materials, in addition to GaN, SiC is also seen as a promising future for high-performance applications candidate materials, GaN, GaAs, SiC can be used for RF applications.

    Specifically, in the RF applications, with the 4.5G deployment and the arrival of 5G era, which the higher the wireless frequency band, or even millimeter-wave band there is a further demand, where GaN will be more application advantages, because the 5G application In the case of a millimeter wave at 28 GHz, the GaN device will be more advantageous than the GaAs device in that GaN can emit the maximum power in the smallest unit area to support faster transfer rates.

    Sun Bin said that with the arrival of 5G era, GaN high-frequency characteristics of the advantages will be gradually reflected, but the gallium arsenide is still the mainstream of RF devices, GaN suitable for 100 ~ 1200v in the low-voltage devices, RF device applications, silicon carbide relative to the advantages of GaN in 1200v or more high-pressure applications will be better.





      “GaAs器件将继续用作增益模块和前置驱动器,用于那些深受GaN影响的应用。”Kevin Harrington表示,GaAs将继续在移动/WLAN /蓝牙应用领域占据主导地位,也将继续应用于功率水平不超过1至2W的高频应用。而GaN器件虽然有潜力达到更好的性能,但价格差异仍是GaN的应用瓶颈。对于需要组合使用多个GaAs功率放大器的传统高频应用,GaN器件将会替代GaAs器件,这种趋势具有性能和成本两方面的优势。